Water vapor interaction with silicon oxide films thermally grown on 6H-SiC and on Si

Structural characterization of nanometer Sic films grown on Si

Continuous, ultrathin silicon carbide (Sic) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at IlOO1300 “C. X-ray and electron diffraction techniques indicated a monocrystalline structure for these nanometer-scale films. High-resolution transmission electron microscopy reveals that five Sic planes are aligned w...

Title Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)

Hydrogen intercalation of graphene grown on 6H-SiC(0001)

Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the...

Si intercalation/deintercalation of graphene on 6H-SiC(0001)

The intercalation and deintercalation mechanisms of Si deposited on monolayer graphene grown on SiC(0001) substrates and after subsequent annealing steps are investigated using low-energy electron microscopy (LEEM), photoelectron spectroscopy (PES), and micro-low-energy electron diffraction (μ-LEED). After Si deposition on samples kept at room temperature, small Si droplets are observed on the ...

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface.

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in ...